http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005109353-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9725e585716109a2c1650d5ce90f21de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3fc591c5e6cc87057b46b438948e0fe |
| publicationDate | 2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005109353-A |
| titleOfInvention | Manufacturing method of light emitting diode |
| abstract | A method of manufacturing a light emitting diode capable of increasing manufacturing efficiency is provided. An epi-wafer 101 and a p-GaP substrate 7 are introduced into a heat treatment furnace 120 in contact with each other, and then a heat treatment mechanism 122 is operated while supplying phosphine and arsine into the heat treatment furnace 120. Then, heat treatment is performed at a high temperature of about 800 ° C. for about 1 hour. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008004587-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007059873-A |
| priorityDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.