http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005107116-A

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filingDate 2003-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f8b10788281aaea02c137aa00cbc8d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04d0108dff69f6a5dfc2131f150b51b
publicationDate 2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005107116-A
titleOfInvention Method for forming resist pattern and method for manufacturing semiconductor device
abstract The present invention relates to a method for forming a resist pattern and a method for manufacturing a semiconductor device. A resist pattern having an opening diameter finer than the resolution limit of a photoresist and having a reverse tapered opening end shape is obtained by a simple method. A resist pattern forming method that can be formed is provided. A photoresist film is formed on a substrate, and an opening having high affinity for a chemical solution that reaches the substrate and reaches the substrate and swells the photoresist film toward the upper side of the sidewall. The photoresist film 12 having an opening reaching the substrate 10 is formed, and a chemical solution 16 is applied to the photoresist film 12 having the opening to swell the photoresist film 16, thereby opening the opening. The side wall portion of each is made into a reverse taper shape. [Selection] Figure 1
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priorityDate 2003-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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