http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005091712-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F212-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-42 |
filingDate | 2003-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cb048b86304949d908d7c33ed66073c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b54ae032e6ac34164d2a92ca05e02fc1 |
publicationDate | 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2005091712-A |
titleOfInvention | Positive resist composition and pattern forming method using the same |
abstract | [PROBLEMS] To solve the problem of performance improvement technology in microfabrication of a semiconductor device using actinic rays or radiation, particularly KrF excimer laser light, electron beam or EUV light, and has high sensitivity, high resolution, and good The present invention provides a positive resist composition that simultaneously satisfies a satisfactory pattern shape and good line edge roughness, and has a good dissolution contrast, and a pattern forming method using the same. [MEANS FOR SOLVING PROBLEMS] (A) A specific repeating unit having an acid-decomposable group having an alicyclic group and a specific polystyrene repeating unit, which are insoluble or sparingly soluble in an alkaline developer, and can be dissolved in an alkaline developer by the action of an acid. A resin having a soluble property, and (B) A positive resist composition containing a compound that generates a specific benzenesulfonic acid upon irradiation with actinic rays or radiation, and a pattern forming method using the same. [Selection figure] None |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005326833-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020195428-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4557159-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9423690-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11327399-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014170922-A |
priorityDate | 2003-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 201.