http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005084143-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K2323-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133734 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13378 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1337 |
| filingDate | 2003-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_594840edf8e0117b2287f30afbd82e76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4544a78ec7291cec8b894632b76e8985 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65f475edba57c29d144d24aa4bece882 |
| publicationDate | 2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005084143-A |
| titleOfInvention | Method for forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus |
| abstract | To provide an inorganic alignment film that is excellent in light resistance and capable of generating a pretilt angle, and to provide a substrate for an electronic device, a liquid crystal panel, and an electronic apparatus provided with such an inorganic alignment film. Moreover, the formation method of such an inorganic alignment film is provided. A method of forming an inorganic alignment film according to the present invention is a method of forming an inorganic alignment film mainly composed of an inorganic material on a substrate, the surface of the substrate on which the inorganic alignment film is formed, from a direction inclined by a predetermined angle theta b with respect to the vertical direction of the surface, the milling step of irradiating an ion beam onto a substrate irradiated with ion beams, to have a film forming step of forming an inorganic alignment film It is characterized by. Predetermined angle theta b in the milling step is 2 ° or more. The acceleration voltage of the ion beam when irradiating the ion beam in the milling process is 400 to 1400V. [Selection] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015045786-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101324398-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008185669-A |
| priorityDate | 2003-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.