abstract |
PROBLEM TO BE SOLVED: To form a silicon nitride film having a good film quality even at a low processing temperature. A silicon nitride (SiN) film is formed on a substrate 6 using silane (SiH 4 ) gas and nitrogen (N 2 ) gas as source gases using an ICP type plasma CVD apparatus. At this time, the supply flow rate of nitrogen (N 2 ) gas is 10 times or more than the supply flow rate of silane (SiH 4 ) gas, and high frequency power (RF power: electromagnetic waves incident on the film formation chamber) with respect to the total supply amount of gas. Energy) is 3 W / sccm or more, and the substrate temperature is 50 ° C. to 300 ° C. Further, the film forming pressure is set to 10 mTorr to 50 mTorr. [Selection] Figure 1 |