http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005068544-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da881d4efd2d92b3513985e804508b2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e13d43717e62053cbf0a9682708a59c6 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32 |
filingDate | 2003-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d81d96cc9a75aba3c2cb3d59228d602 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81c5b5e34df6c5f9d91b766a45611d90 |
publicationDate | 2005-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2005068544-A |
titleOfInvention | Method for adding aluminum to zinc oxide-based transparent conductive film |
abstract | PROBLEM TO BE SOLVED: To produce a thin film that faithfully reflects the composition of a solid evaporation source produced by combining materials having greatly different melting points and vapor pressures in a vacuum vapor deposition method using pressure difference arc plasma as a heating source. Was extremely difficult. When an aluminum impurity-added zinc oxide thin film is formed using a pressure difference arc plasma vacuum deposition method using an evaporation source composed of a solid material containing zinc (Zn) or a compound containing Zn as a main raw material, Introducing a compound containing Al continuously or intermittently into the arc plasma in the form of a gas. [Selection figure] None |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9934968-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015174517-A1 |
priorityDate | 2003-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.