http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005064466-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
filingDate | 2004-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9f06594ffc869bbbb3c3acb983edeae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8b969d41942d1de746ca025ebd72e7b |
publicationDate | 2005-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2005064466-A |
titleOfInvention | Semiconductor device and manufacturing method thereof |
abstract | PROBLEM TO BE SOLVED: To prevent disconnection of an electrode caused by performing a relatively high temperature heat treatment on a dielectric. A capacitive element includes a noble metal oxide, nitride or oxynitride polycrystal formed on a bottom surface and a wall surface of an opening provided in a third insulating film on a semiconductor substrate. A lower electrode 23 made of, a capacitor insulating film 24 made of a dielectric formed on the lower electrode 23, and a large number of noble metal oxides, nitrides or oxynitrides formed on the capacitor insulating film 24. And an upper electrode 25 made of crystals. With this configuration, it is possible to prevent disconnection of the lower electrode 23 and the upper electrode 25 that occur during heat treatment for crystallization of the dielectric with respect to the capacitor insulating film 24 and diffusion of atoms constituting the capacitor insulating film 24. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009140955-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745868-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577030-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011223031-A |
priorityDate | 2003-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.