http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005064466-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
filingDate 2004-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9f06594ffc869bbbb3c3acb983edeae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8b969d41942d1de746ca025ebd72e7b
publicationDate 2005-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005064466-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract PROBLEM TO BE SOLVED: To prevent disconnection of an electrode caused by performing a relatively high temperature heat treatment on a dielectric. A capacitive element includes a noble metal oxide, nitride or oxynitride polycrystal formed on a bottom surface and a wall surface of an opening provided in a third insulating film on a semiconductor substrate. A lower electrode 23 made of, a capacitor insulating film 24 made of a dielectric formed on the lower electrode 23, and a large number of noble metal oxides, nitrides or oxynitrides formed on the capacitor insulating film 24. And an upper electrode 25 made of crystals. With this configuration, it is possible to prevent disconnection of the lower electrode 23 and the upper electrode 25 that occur during heat treatment for crystallization of the dielectric with respect to the capacitor insulating film 24 and diffusion of atoms constituting the capacitor insulating film 24. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009140955-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577030-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011223031-A
priorityDate 2003-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID57679
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID74018
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415776239
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID4335672
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID3645724
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9794626
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID518712
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336889
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451110572
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593443
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583170
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID411303255
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID40410
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID100274341
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID123105
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448362446
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID535750
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23924
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID557014
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID106353716
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166703
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414004986
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545355
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419530175
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82895

Total number of triples: 44.