| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20c3f69d433d9162ca926126bdac73fd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_922b0481a494d219eaf3a3f37e78ac9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c1113a47752f5a8f91efb91b57b6c6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea3f7bed8fc90f90e2fe27c539a44d5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bd5dfd0f2be3a1c9e1d75b17380ac82 |
| publicationDate |
2005-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005064453-A |
| titleOfInvention |
Thin film transistor and manufacturing method thereof |
| abstract |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor having excellent operating characteristics and extremely few defect levels. A step of forming an undercoat film made of a silicon nitride film 2 and a silicon oxide film 3 on an insulating substrate 1, a step of forming an amorphous silicon film 10 on the undercoat film, silicon A step of forming an interfacial protective film made of the silicon oxide film 11 on the film 10, a step of irradiating the substrate on which the interfacial protective film is formed with a YAG laser to laser anneal the silicon film 10, and a silicon film after the laser annealing 4 and a step of forming a gate insulating film made of the silicon oxide film 5 on the patterned substrate. The undercoat film, the amorphous silicon film 10 and the interface protective film are vacuumed in a vacuum chamber. It is formed sequentially while maintaining the state. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104658898-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008091513-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102064109-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714627-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012081474-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7304929-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020057016-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905699-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069724-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019136873-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148721-B2 |
| priorityDate |
2003-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |