http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005064309-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate | 2003-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dc02fa13277ef1c11974ee481df1b52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8a438f1f4831ddbd24fedaafe8640c2 |
| publicationDate | 2005-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005064309-A |
| titleOfInvention | Optically pumped surface emitting laser |
| abstract | PROBLEM TO BE SOLVED: To provide a small and inexpensive photoexcited surface emitting laser. SOLUTION: Non-doped Al 0.95 Ga 0.05 As (thickness 200 nm) and non-doped GaAs (thickness 100 nm) are formed on a non-doped GaAs substrate using a metal organic vapor phase epitaxy (MOVPE) growth apparatus. A film was formed and Al 0.95 Ga 0.05 As was selectively oxidized by spraying water vapor from the side surface of the wafer in a nitrogen atmosphere. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012004279-A |
| priorityDate | 2003-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859 |
Total number of triples: 17.