| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2004-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e9caa0b5ef27270423fa53cdb10c8e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6945681934ea5c2913a1b114f144c4b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e307db265423fbc6b959252e5d49c03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a4bca01be04756217d875184e6a8174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf77d26d6ee20fcf2713f28fad20971b |
| publicationDate |
2005-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005051252-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To improve the throughput of a semiconductor device provided with a polycrystalline silicon film having excellent characteristics. An amorphous silicon film is formed on a glass substrate, the amorphous silicon film is laser-annealed to form a polycrystalline silicon film, and gate insulation is formed on the polycrystalline silicon film. A gate electrode 4 having a polycide structure including a W silicide film 4b is formed through the film 3, an impurity region 6 serving as a source / drain is formed in the polycrystalline silicon film 2, and the impurity region 6 is formed using an RTA method. Activated by rapid heating. [Selection] Figure 8 |
| priorityDate |
1995-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |