http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005045278-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2004-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b7586db3f00832e26eb1ef6c192d9f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90905832222d7d06cd99bd9cb2c95883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c44c99e0387b3532778583dc794e5597 |
| publicationDate | 2005-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005045278-A |
| titleOfInvention | Thin film integrated circuit and method for manufacturing thin film integrated circuit |
| abstract | PROBLEM TO BE SOLVED: To provide a highly reliable thin film integrated circuit and a manufacturing method thereof. A thin film integrated circuit according to the present invention is provided with a silicon oxynitride film containing 1 to 10% of nitrogen in close contact with an underside of an island-shaped semiconductor film. It has an insulating film, a gate electrode, and an interlayer insulating film, and the interlayer insulating film is a multilayer film of a silicon oxide film and a silicon nitride film. Note that the interlayer insulating film may be a multilayer film of a silicon nitride film and a silicon oxide film or a single layer film of a silicon nitride film. [Selection] Figure 1 |
| priorityDate | 2004-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.