http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005044908-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cfa11ef6f0c5577b4612b415ff30253
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
filingDate 2003-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00b43cfa7328712587b0a3ecec600c6e
publicationDate 2005-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005044908-A
titleOfInvention Substrate heat treatment support member
abstract Provided is a substrate heat treatment support member that does not cause a slip on a semiconductor substrate or a film thickness unevenness on a substrate surface even when used in an epitaxial growth process, and does not cause dullness on the surface of a white epitaxial film. The substrate heat treatment support member is a substrate heat treatment support member in which a concavely curved substrate receiving portion for supporting a substrate to be heat treated is provided on a surface of a flat substrate in a circular shape. The measurement positions measured in eight directions from the center to the outer periphery at an equal interval of 45 ° have a semicircular arc shape with the center at the deepest part and the two or more continuous directions. The shape of the following measurement position is deeper than the semicircular arc shape at a position of 1/5 to 1/2 of the radius from the center. [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017022320-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106876248-A
priorityDate 2003-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 20.