| abstract |
PROBLEM TO BE SOLVED: To provide a method for producing a quantum dot silicate thin film excellent in mechanical stability and thermal stability. SOLUTION: The surface of a semiconductor quantum dot of 1 to 100 nm produced by a wet method is subjected to sol-gel reaction with at least one functional group selected from a phosphine-based functional group, an amine-based functional group, and a thiol-based functional group. After the substitution with a silane compound having a functional group, the substituted quantum dots are subjected to a sol-gel reaction and then coated on the substrate, or coated on the substrate and then subjected to a sol-gel reaction and heat treatment. Manufacturing method of quantum dot silicate thin film. [Selection] Figure 2 |