| abstract |
The present invention provides a multilayer substrate that has a large degree of freedom in device design and can have a large choice in device manufacturing. A laminated substrate having a single crystal substrate of Si, SiGe, or Ge, an oxide intermediate layer epitaxially grown on the single crystal substrate, and a GaAs layer epitaxially grown on the oxide intermediate layer In the above, at least one of the oxide intermediate layers is made of a metal element of Li, Be, Mg, Ca, Ba, Sc, Y, La, Ce, Nd, Sm, Eu, Tm, Yb, Al, Th, Ta. And at least one crystal plane of the oxide intermediate layer includes at least one of them, and a quadrangle composed of one kind of atomic arrangement of the constituent elements matches the atomic arrangement on the surface of the underlying single crystal substrate. is doing. [Selection] Figure 1 |