http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005038964-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2003-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cd812480f3d63636b047bea9869968c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adbc648b22c21e73fa9811ef52b83133 |
| publicationDate | 2005-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005038964-A |
| titleOfInvention | Semiconductor wafer and manufacturing method thereof |
| abstract | A low-cost semiconductor wafer having a strained Si layer with low dislocation defect density and good crystallinity, and a method for manufacturing the same. A semiconductor wafer comprising at least a silicon single crystal substrate, a SiGe layer epitaxially grown on the silicon single crystal substrate, and an Si layer epitaxially grown on the SiGe layer, the silicon single crystal A semiconductor wafer characterized in that the surface layer of the substrate and / or the SiGe layer is made porous, and at least the surface layer of the silicon single crystal substrate is made porous to form a porous Si layer, A heat treatment for smoothing the surface of the formed porous Si layer is performed, a SiGe layer is epitaxially grown on the surface of the smoothed porous Si layer after the heat treatment, and a Si layer is epitaxially grown on the surface of the grown SiGe layer A method for manufacturing a semiconductor wafer. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009114108-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030119-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8900399-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8481357-B2 |
| priorityDate | 2003-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.