| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2004-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38888c0c8124c63f71f0f852958a0df7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed96f22bf9f6532ec1dfe1e534b270d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5988e48ab8fbbfd9debfae3e3966723 |
| publicationDate |
2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005033218-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To bury a wiring layer made of Al or the like in a connection hole formed in an interlayer insulating film on one main surface of a semiconductor substrate, and in particular, it is possible to prevent a decrease in EM resistance. A method of manufacturing a semiconductor device in which migration of sputtered particles on a semiconductor substrate is activated by increasing the kinetic energy of sputtered particles to be a first conductive film 26, and the first on the semiconductor substrate. It includes a step of forming the conductive film 26 and a step of forming the second conductive film 28 on the first conductive film 26. [Selection] Figure 9 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111847373-A |
| priorityDate |
1997-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |