| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2004-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f726c4ad264ab9236811b2aba159ef5 |
| publicationDate |
2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005033182-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
PROBLEM TO BE SOLVED: To suppress an increase in contact resistance and improve a yield by suppressing anodization of a TiN layer at the bottom of a via hole when forming a via hole for connection with an aluminum wiring. SOLUTION: The temperature at the time of sputtering a titanium film is set to 200 ° C. or more and 225 ° C. or less to make the film quality resistant to oxidation (step 11). Before applying a photoresist for etching a via hole, UV irradiation is performed to reduce + charge (step 12), and nitrogen plasma treatment is performed at the time of via hole etching and after plasma stripping to reduce + charge. (Steps 13 and 14) The concentration is controlled so that the specific resistance value of the rinsing water at the time of organic peeling is 0.3 MΩ · cm or less (Step 15). Further, the sputtering amount when performing high frequency sputtering of the barrier metal layer is set to 18 nm or more and 22 nm or less, and the TiO n film is removed (step 16). [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354913-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4547289-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006278354-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102058564-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180131345-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120109059-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7786005-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101674538-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009033209-A |
| priorityDate |
2003-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |