http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005032897-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da474ce13ec9e4559545377391ff0f44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f8099d4ec6f7a254b1ad14426c44fdb |
| publicationDate | 2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005032897-A |
| titleOfInvention | Heterojunction bipolar transistor |
| abstract | An object of the present invention is to provide an HBT structure capable of increasing the breakdown voltage of a collector layer without changing the film thickness and carrier concentration of the collector layer. A GaAs subcollector layer, a GaAs collector layer, a GaAs base layer, an emitter layer made of AlGaAs or InGaP are sequentially stacked on a semi-insulating substrate, and a collector electrode is formed on the subcollector layer. 13 is a heterojunction bipolar transistor in which a base electrode 12 is formed on the base layer and an emitter electrode 11 is formed on the emitter layer. All or part of the collector layer 6 is made of AlAs having a wider band gap than GaAs. The collector layer 10 is made of a material such as AlGaAs or AlPSb to increase the breakdown voltage of the collector layer. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115207089-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009224407-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103681816-A |
| priorityDate | 2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.