| abstract |
Provided is a highly active pn junction photocatalyst material including a p-type semiconductor that has a simple manufacturing process and has a sufficiently wide band gap with respect to the oxidation / reduction potential of water. Further, the present invention provides a pn junction photocatalyst material as a thin film that can be formed on a substrate having relatively low heat resistance such as glass. A photocatalytic material characterized in that the following (a) and (b) are joined. (A) p-type optical semiconductor whose band gap is 2.8 eV or more, carrier density is 10 13 (cm −3 ) or less, and dopant is nitrogen (b) n-type optical semiconductor |