| abstract |
PROBLEM TO BE SOLVED: To provide a bonding technique capable of realizing a highly reliable bonding structure without being affected by an oxide film or the like at a bonding portion. A bonding apparatus that sandwiches a semiconductor wafer 100 and an interposer 200 between a lower chuck 43 and an upper chuck 46 and heats them with a lower heater 44 and an upper heater 47 to directly bond connection electrodes on both surfaces. The lower chamber wall 48b supported by the lower chuck 43 and the upper chamber wall 48a supported by the upper head 45 that supports the upper chuck 46 are provided, and prior to joining, the upper chamber wall 48a and the lower chamber wall are provided. The processing chamber 48 in which the semiconductor wafer 100 and the interposer 200 held by the lower chuck 43 and the upper chuck 46 are accommodated is configured by closely contacting the 48b, and a chemical solution, a cleaning solution, and an antioxidant are contained in the processing chamber 48. Etc. were introduced to perform surface treatment such as removal of the oxide film at the joint. [Selection] Figure 4 |