http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005012193-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2004-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6b645664d55ec459fff85dde857bdb3 |
| publicationDate | 2005-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005012193-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To increase the luminous efficiency of a group III nitride semiconductor-based semiconductor device by forming fluctuations in the band gap of a group III nitride semiconductor. A semiconductor device includes an active layer made of a group III nitride semiconductor layer containing at least aluminum and having three or more different constituent elements. The active layer has a bandgap spatial fluctuation based on a distribution of aluminum composition in the layer. [Selection] Figure 2 |
| priorityDate | 2003-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.