| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2003-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7cc5f1d7f5417e4a80cfe05ab3bb528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5707e57a5385b82e0887457280416fe7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b4baf53da9d9df966eb4be34a5cbc12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd0d61438ff0e8ffdd35a3c647761bd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77b84321e492fd712852bdea1308cd24 |
| publicationDate |
2005-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005011915-A |
| titleOfInvention |
Semiconductor device, semiconductor circuit module and manufacturing method thereof |
| abstract |
An object of the present application is to form a semiconductor device for high frequency amplification on a Si layer using a laminated structure of SiC or (SiGe) C, and to realize integration with a Si integrated circuit. The essence of the present invention is that a (SiGe) C layer having a stoichiometric ratio of approximately 1: 1 is locally formed on a Si layer, and a wide forbidden band width semiconductor device is manufactured inside these stacked structures. Then, a Si semiconductor integrated circuit is formed in a region where the laminated structure is not formed. The wide forbidden band width semiconductor device enables high-frequency and high-power operation of the element, and realizes high functionality by incorporating a Si integrated circuit. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008211197-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014225681-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007073873-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9962957-B2 |
| priorityDate |
2003-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |