http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005005584-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f55aba8e5bca84d885b8cba5cc21f30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2003-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6049e7c983a416135ac2a8ce63258492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb5e2dffeb201c4d525e3fa880b3559c |
| publicationDate | 2005-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005005584-A |
| titleOfInvention | Low dielectric constant thin film and semiconductor device having the same |
| abstract | The present invention relates to a low dielectric constant thin film that achieves both high adhesion strength (adhesiveness) to a base substrate and low dielectric constant without causing destruction or peeling of the film in the CMP process, and the same An object of the present invention is to provide a semiconductor device. The low dielectric constant thin film of the present invention is a thin film made of boron nitride (BN, boron nitride) containing carbon (C, carbon), and the carbon content is 5 mol% or more and 20 mol% or less. It is characterized by being. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012094900-A |
| priorityDate | 2003-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.