http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005004812-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-83 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-00 |
filingDate | 2003-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fffa437a52949005538a8abffd0cba49 |
publicationDate | 2005-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2005004812-A |
titleOfInvention | Semiconductor memory device |
abstract | Provided is a semiconductor memory device capable of providing reliable redundancy relief with low power consumption when a disconnection failure occurs in a word line. A semiconductor memory device according to the present invention includes one or more redundancy word lines. A plurality of word lines, a plurality of bit line pairs, a plurality of memory cells connected to the plurality of word lines and the plurality of bit line pairs, and a plurality of memory cells connected to one end of the plurality of word lines, respectively. A plurality of word line drivers each controlled by a word line control signal and the other end of each of the plurality of word lines, the signal level of the word line is input, and the signal level of the word line is connected thereto If the memory cell is at a first level at which the memory cell is in a high impedance state, the memory cell is turned on to output the first level signal to the word line, and the signal level of the word line is connected thereto. Serial have if second level memory cell is input state, a plurality of first word line control circuit according to the cutoff state, the. [Selection] Figure 1 |
priorityDate | 2003-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID135487615 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450839641 |
Total number of triples: 16.