| abstract |
Provided is a method for uniformly forming a thin film for a magnetic device. Atomic layer growth can produce a layer having a uniform thickness on the order of atoms. For example, a magnetic tunnel junction insulating layer with a completely uniform thickness of 4 monoatomic layers or less is provided. Further, the conductor layers, including the magnetic layers 12, 16 and the non-magnetic layer 14, are provided by ALD without defects such as spiking and other non-uniformities. The method disclosed herein involves forming a metal oxide layer by repeating ALD multiple times, followed by reduction of the oxide. Oxides tend to maintain more stable interfaces during their formation. |