| abstract |
The present invention relates to an integrated circuit device comprising a circuit formed in an active circuit area (4) of a surface of a semiconductor body (1). The circuit comprises a circuit device (2, 3) and an interconnect structure having at least one patterned metal layer (5, 6) interconnecting the circuit device (2, 3) to form a circuit. Including. Patterned metal layers (5, 6) are disposed throughout the circuit device (2, 3). The circuit further comprises a layer (9) of inert material placed on the interconnect structure (8) and bump electrodes (11, 12, 13) for connecting the circuit to external circuits. The bump electrodes (11, 12, 13) are placed substantially vertically above the active circuit area (4). According to the invention, basically the circuit devices (2, 3) extend from the interconnect structure (8) and by means of electrical connections (10) passing through the layer (9) of inert material, bump electrodes (11) , 12, 13) directly connected electrically. |