| abstract |
Thin films for use as dielectrics in semiconductor devices and other devices are made from silica zeolites, preferably pure silica zeolites (such as pure silica MFI). This film has a low k value, generally in the range of less than about 2.7 and less than a k value of 2.2. This membrane has a relatively uniform pore distribution, good mechanical strength and adhesion, is relatively insensitive to moisture and is thermally stable. The membrane can be prepared from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure inducer (eg, quaternary ammonium hydroxide). In one method, a film is formed from a synthetic composition by in-situ crystallization on a substrate. In another method, the membrane is made by preparing a suspension of zeolite crystals, redispersing, spin-coating by in-situ crystallization, or using excess alkanols produced during the production of the synthetic composition. It is manufactured by spin coating. Zeolite membranes with patterned surfaces can also be manufactured. |