Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a1be0e5697d9ac3330ad2e40d26ae03 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
filingDate |
2003-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10f43bd32525868a747197fb164de19a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_153655c240a8fc786f489ca700946796 |
publicationDate |
2004-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2004349428-A |
titleOfInvention |
Semiconductor device and method of manufacturing the same |
abstract |
In a high power transistor, when the thickness of a semiconductor substrate is set to 200 mm or less, problems such as a decrease in mechanical strength and breakage of an element occur, and as a result, there is a disadvantage that the resistance of the substrate is large. A metal substrate is used as a substrate for a semiconductor device. The metal substrate includes a metal base made of a first metal and a connection metal layer made of a second metal covering the metal base. A substrate having a structure in which a diffusion preventing layer for preventing diffusion of a first metal on a metal layer is obtained. [Selection diagram] Fig. 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008139915-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399915-B2 |
priorityDate |
2003-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |