| abstract |
A semiconductor element having a low optical activation threshold is provided. A dot structure in which a substrate is heated to 420 ° C. or higher and 550 ° C. or lower, a gallium source, an indium source, an arsenic source, and an antimony source are supplied on the substrate, and crystals are grown at a rate of 0.6 nm or less per second. The semiconductor device is provided with a dot crystal film having high uniformity, independence, high formation density, and high purity. [Selection] Figure 2 |