| abstract |
An object of the present invention is to provide a wet etching method in which oxides are not generated on a semiconductor surface, and an improvement in performance and reliability of a semiconductor device. In a method of manufacturing a semiconductor device, the method includes a step of etching a compound semiconductor using a solution, wherein the etching solution contains a chemical substance containing a Group 6B atom as a constituent element, and all of the chemical substances constituting the chemical substance are contained. Wet etching of a compound semiconductor is performed using an atomic number of a 6B group atom of 16 or more (for example, all the 6B group atoms constituting the chemical substance are sulfur atoms). [Selection diagram] Fig. 1 |