| abstract |
An object of the present invention is to provide a film forming method for obtaining uniformity of film thickness, good step coverage, and high quality film. According to the present invention, when introducing a raw material gas into a reaction furnace in a CVD film formation performed under reduced pressure, an on-off valve provided between the reaction furnace and an exhaust pump is closed, and After stopping the introduction of the raw material gas, a deposition step of maintaining the pressure parallel state for a certain period of time, and thereafter or simultaneously, continuously or in the same reactor, oxidizing or nitriding the film deposited in the previous step by plasma once or A film forming method and a film forming apparatus characterized in that a film having a predetermined thickness is formed by repeating a plurality of times. [Selection diagram] Fig. 4 |