http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004327812-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2003-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd22b69b44cef362dced557b02ecda87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4071f1b72960cf24f56669f9e010b3b7 |
| publicationDate | 2004-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004327812-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | An object of the present invention is to provide a MONOS device having good charge (information) retention (DataRetention) characteristics, charge (information) rewriting characteristics (Endurance characteristics), and WriteDisturb resistance. An ONO layer including a first oxide film, a nitride film, and a second oxide film is formed in the active region by separating into a shallow trench element isolation region and an active region. At this time, first, a first oxide film 41 forming a bottom layer is formed on the shallow trench element isolation region 2 and the active region 3, and then a nitride film 42 forming an intermediate layer is formed on the active region 3. The active region 3 is formed so as to be partially exposed, and then a second oxide film 42 serving as a top layer is formed on the shallow trench element isolation region 2 and the active region 3 by thermal oxidation. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018006694-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7495285-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007081294-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7879677-B2 |
| priorityDate | 2003-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.