| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc813c8997f7d619ab4e0e14453d0433 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2003-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea285a848758f27a7795778b6c6922e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbcdbb5299a10f81b4d9380594ca5da3 |
| publicationDate |
2004-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004323493-A |
| titleOfInvention |
Tetrakis (ethylmethylamino) vanadium, method for producing the same, and method for forming vanadium nitride film using the same |
| abstract |
Kind Code: A1 Abstract: As a raw material for forming a vanadium nitride and a vanadium oxynitride thin film as a barrier film by MOCVD and ALD, a vapor pressure which is liquid at room temperature and is about 5 times higher than that of known V (NEt 2 ) 4 is obtained. To provide a stable compound having Further, the present invention provides a method for producing the same and a method for forming a vanadium nitride film using the same. A novel compound V (NEtMe) 4 is a compound having a melting point of −70 ° C. or less and a vapor pressure of 1 Torr / 120 ° C. It is obtained by reacting 1 mol of VOCl 3 and 5 mol of LiNEtMe in an organic solvent at around room temperature, separating by filtration, distilling off the solvent and then vacuum distillation. Liquid and easy to manufacture and purify. Using this compound as a raw material, a vanadium nitride film can be formed on a SiO 2 / Si substrate by MOCVD at 600 ° C. and 0.05 Torr. [Selection diagram] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10882874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007024094-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11014814-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106848282-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190020738-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006093550-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106848282-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018021466-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100734854-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11613463-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009506207-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009541316-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7741216-B2 |
| priorityDate |
2003-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |