Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35f1bf7625ec038f633e972977ad7a70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a521cfa321c963978df8ae98a84056a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-88 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0687 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068 |
filingDate |
2003-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0e592b63f99b4276aab8df95ba349a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b57efd3fea432fd7e339152bc1029031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f9440c0fcfc0ae597989a7b2788e77a |
publicationDate |
2004-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2004323277-A |
titleOfInvention |
High pressure phase type cubic spinel type silicon nitride and method for producing the same |
abstract |
A high-pressure phase-type cubic spinel-type silicon nitride excellent in crystallinity and a method for producing the same are provided. The high-pressure phase cubic spinel silicon nitride has a half-width of the maximum peak of 0.65 ° or less among peaks of the cubic spinel silicon nitride measured by X-ray diffraction. Further, the weight change start temperature by the thermogravimetric differential thermal analysis (TG-DTA analysis) is 700 to 1100 ° C. The cubic spinel silicon nitride of the high-pressure phase type contains a compact 19 of a mixed powder of a low-pressure phase-type silicon nitride powder and a metal powder in the container 11 and the explosive 22 in the container 11. It is manufactured by disposing it around the perimeter 19 and applying an impact pressure to the molded body 19 from the detonation of the explosive 22 to compress the molded body 19. [Selection diagram] Fig. 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011140414-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011140415-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014144911-A |
priorityDate |
2003-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |