| abstract |
Provided is a method for processing a single crystal ingot, in which a carrier concentration of an ingot is correctly evaluated before processing a wafer, a loss generated in processing selection of the wafer is reduced, and the ingot is processed into a wafer having desired physical property values. Kind Code: A1 A first step of mechanically grinding a single crystal ingot, and a single crystal which is either a portion where facet growth does not occur or a portion where a facet growth region is removed according to the crystal growth orientation of the single crystal ingot. The second step of identifying the crystallographic plane of the side surface of the ingot and chemically etching only the surface of the ingot, and irradiating the specified surface of the surface chemically etched in the second step with excitation light, A third step of evaluating the carrier concentration from the photoluminescence spectrum based on the third step and a fourth step of performing slicing with the mechanically ground surface not subjected to chemical etching in the third step as a fixed surface are sequentially performed. [Selection] Figure 2 |