http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004277854-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad78b36d08c20f06075145cc1caf3ac8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-02 |
| filingDate | 2003-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23c7a15f3bf75834ae6aa0a52e2a4f65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a182b36ab21202ef393162d55616d367 |
| publicationDate | 2004-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004277854-A |
| titleOfInvention | Semi-additive etching agent, semi-additive method using the same, and method of manufacturing wiring board |
| abstract | The present invention provides a semi-additive etching agent capable of maintaining a good circuit cross-sectional shape even for a fine circuit, a semi-additive method using the same, and a method for manufacturing a wiring board. A semi-additive etching agent having a pH of 13 or more and containing a metal ferricyanide salt, preferably potassium ferricyanide, and a chelating agent, preferably gluconic acid and / or a salt thereof. Forming a thin film layer of a chromium-containing material and a thin film layer of copper on an insulating base material to form a power supply film, forming a resist layer on the power supply film, and electroplating copper in an opening of the resist layer Forming a layer, removing the resist layer, removing the copper thin film layer of the power supply film with the first etchant, and removing the thin film layer of the chromium-containing material of the power supply film with the second etchant. And a removing step, wherein the semi-additive etching agent is used as the second etching agent. [Selection diagram] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009011026-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006245199-A |
| priorityDate | 2003-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.