http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004273991-A

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filingDate 2003-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5acf47d36b4882f7c5b3d6f50d88775
publicationDate 2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004273991-A
titleOfInvention Semiconductor manufacturing method
abstract A semiconductor manufacturing method capable of removing a deposit in a minimum time and obtaining a semiconductor device of stable quality is provided. A semiconductor manufacturing method includes forming a film on a plurality of wafers by repeatedly inserting a wafer into a chamber of a CVD processing apparatus and forming a film. A reducing gas is supplied into the chamber, and the inside of the chamber 1 is conditioned by plasma generated by applying high-frequency power. After alternately performing the film formation and the conditioning process a predetermined number of times, a cleaning process of removing the deposits adhered to the inside of the chamber 1 by the predetermined number of the film formation processes by plasma etching is performed. [Selection diagram] FIG.
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Total number of triples: 31.