| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_992ae400daa76d7b27a789e358ca2303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf9436d5223333c4643797985dedc513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee7e05afb76eea5e151c629f148973a1 |
| publicationDate |
2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004269313-A |
| titleOfInvention |
Manufacturing method of gallium nitride crystal substrate |
| abstract |
An object of the present invention is to prevent a decrease in yield due to generation of cracks when producing a gallium nitride crystal substrate. A step of depositing a metal film or a metal nitride film on a single crystal sapphire substrate, a substrate obtained by growing a single crystal gallium nitride film on a sapphire substrate or a starting substrate selected from a single crystal semiconductor substrate; Depositing a gallium nitride film on the metal film or the metal nitride film, and selectively irradiating the substrate on which the gallium nitride film is deposited with microwaves to selectively heat the metal film or the metal nitride film; Removing the starting substrate from the substrate on which the gallium nitride film has been deposited to obtain a freestanding gallium nitride substrate. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006126330-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7572652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11451211-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017506888-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013062528-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017155032-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017155032-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4563230-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381230-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113078046-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006273618-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8853672-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007072984-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7829435-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8124504-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008078275-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008243934-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10213785-B2 |
| priorityDate |
2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |