http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004253440-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bfdf49224a405be1f7b653c56ebad94 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate | 2003-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d901ef23866a83cfea947fb91ae6cb0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97c1e3ef4085fe66822044e06acad7db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83d8344c92c6a6399d08b0ad61d90140 |
| publicationDate | 2004-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004253440-A |
| titleOfInvention | Field effect transistor and method of manufacturing the same |
| abstract | An object of the present invention is to provide a field effect transistor having improved mobility especially at room temperature as compared with a conventional field effect transistor. In a field effect transistor having a buffer layer, an electron transit layer, a spacer layer and an electron donating layer on a compound semiconductor substrate, the field effect transistor is grown at a temperature lower than the growth temperature of the spacer layer. obtain. At this time, examples of the material of each layer include those in which the substrate is made of InP, the buffer layer is made of AlInAs, the electron transit layer is made of InP or GaInAs, the spacer layer is made of AlInAs, and the electron donating layer is made of AlInAs. [Selection diagram] Fig. 1 |
| priorityDate | 2003-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.