http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004252405-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F222-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 2003-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f89cf3de44d48c2eb2654befcd951f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_633fe81736d25e49f2c5b61625cc22c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6d0f373c2be10f166d26335c12da74b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11d08fb1bdc2dabc32da488e630b19c3 |
| publicationDate | 2004-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004252405-A |
| titleOfInvention | Silicon-containing resist material and pattern forming method |
| abstract | The silicon-containing resist material comprises a polymer compound containing a repeating unit represented by the following general formula (1). Embedded image (In the formula, R 1 is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an acid labile group, or an adhesive group. R 2 , R 3 , and R 4 are the same. Or a different linear, branched, or cyclic alkyl group or haloalkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 20 carbon atoms, and m is a positive number.) The resist material of the present invention is sensitive to high energy rays and has excellent sensitivity, resolution and oxygen plasma etching resistance at a wavelength of 300 nm or less. Accordingly, the polymer compound and the resist material of the present invention can be used as a material for a two-layer resist particularly excellent in these properties, and can easily form a fine pattern perpendicular to the substrate, and It is suitable as a fine pattern forming material for VLSI manufacturing. [Selection diagram] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7919226-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7928262-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010065202-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014035413-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014028904-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030515-B2 |
| priorityDate | 2002-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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