http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004241627-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
filingDate 2003-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32ec15e49e416e4df20e5186fa6202df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1048e5fe4164dfbc915eac3e66cb97dc
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publicationDate 2004-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004241627-A
titleOfInvention Semiconductor laser, method of driving semiconductor laser, and wavelength conversion element
abstract A semiconductor laser capable of performing a self-pulsation operation stably at a high frequency is provided. A semiconductor laser is provided with a first conductive type semiconductor substrate, a first conductive type cladding layer, an optical waveguide layer, and a front DFB region provided with a diffraction grating close to the optical waveguide layer. A rear DFB or DBR region 103 having a diffraction grating close to the optical waveguide layer 3 and electrically separated from the front DFB region 101; and a second conductivity type clad formed so as to embed the diffraction grating 5. And the diffraction grating 5 in the DFB region 101 and the diffraction grating in the rear DFB or DBR region 103 have a phase shift portion in part. [Selection diagram] Fig. 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104756332-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9952390-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4629022-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006324300-A
priorityDate 2003-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.