http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004241504-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2003-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e51435844c4e0947ea5e26c03a31b008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bb619600f2d767093a1ae070e08fd14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e334bf43c5c74612c3ab052ef9bf61d |
| publicationDate | 2004-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004241504-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object of the present invention is to provide a method for manufacturing a semiconductor device capable of reducing an off-leak current while keeping an absolute value of a threshold voltage low. After forming an n + region by injecting phosphorus into a poly-Si layer in an N-channel TFT formation region, a resist having an opening only in a P-channel TFT formation region is provided. By performing boron ion implantation using the mask 9, ap + region 10 serving as a source / drain region of a P-channel TFT is formed. Next, by implanting hydrogen with the resist mask 9 remaining, the channel region (poly-Si layer 4) and the source / drain region (p + region 10) are formed in the region where the P-channel TFT is to be formed. Perform hydrotreating. According to such a method, since hydrogenation processing is not performed on the N-channel TFT, unnecessary transition of the threshold voltage in the N-channel TFT is prevented, and an increase in off-leakage current can be avoided. [Selection] Fig. 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685542-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985139-B2 |
| priorityDate | 2003-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.