| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38c2e376c16f0e91536ef42dfc877bf7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2004-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eb09d93cb79c6e98f09ed334a9243b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2321a6aa69920285df5130ce4e56f52e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fe568fbb7e965a457a284a59a952f38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5cb0710540c77a9dc460f4e1056cb1c |
| publicationDate |
2004-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004228581-A |
| titleOfInvention |
Insulating film on semiconductor substrate and manufacturing method thereof |
| abstract |
A method for forming an improved insulating film having a low dielectric constant and excellent film quality is provided. An insulating film vaporizes a silicon-containing hydrocarbon compound so as to provide a source gas, and introduces a reaction gas comprising an additive gas such as a source gas and an inert gas and an oxidizing gas into a reaction space of a plasma CVD apparatus. A siloxane polymer film is deposited on the semiconductor substrate by a plasma polymerization reaction at a temperature of −50 ° C. to 100 ° C. The residence time of the reaction gas in the reaction space is extended by reducing the total flow rate of the reaction gas in such a way as to form a siloxane polymer film having a low dielectric constant such as 2.5. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180099476-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009008376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004274052-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100880874-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101139175-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8378464-B2 |
| priorityDate |
2003-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |