Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
filingDate |
2003-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd37006000973a918035f10717221bb6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5176525b98d669ac91da43750374ab82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fe8fc8cf8f6c32ef675726c48940bcc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_080a3aea503b514ebdd8b81949de37f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eed7e824931d93985c23de1bee09060 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8d2a7b494757c6315c99cc1109bafbd |
publicationDate |
2004-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2004228457-A |
titleOfInvention |
Method for manufacturing semiconductor device and method for oxidizing semiconductor substrate |
abstract |
A method of manufacturing a semiconductor device having a trench, wherein a method of forming an oxide film thicker and smaller in stress at a corner portion of the trench than at other portions is provided. When oxidizing a trench formed in a semiconductor substrate, the trench is oxidized in an oxygen atmosphere containing dichloroethylene at a predetermined weight%, so that the thickness of a corner portion of the trench is larger than the thickness of other portions. An oxide film can be formed, whereby a semiconductor device with improved dielectric breakdown characteristics can be obtained. [Selection] Fig. 9 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7696569-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745303-B2 |
priorityDate |
2003-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |