http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004228277-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db496c7f79f0dfbca146c6a7100e0992 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2003-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6beaac4b279ae7ab25bf11d88c2a4874 |
| publicationDate | 2004-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004228277-A |
| titleOfInvention | Optical semiconductor device and method of manufacturing the same |
| abstract | In a conventional optical semiconductor device in which a laser diode and a waveguide are integrated on a substrate, it is preferable that the band gap of the waveguide region 33 be large, but the thickness of the waveguide region 33 is small. The confinement effect is weakened, and the waveguide loss is increased. However, in the conventional manufacturing method, the band gap is large and the film thickness cannot be increased. A surface temperature T of an n-InP substrate in a waveguide region at the time of MOVPE is locally increased by placing an Fe: InP film under a growth inhibition mask in a waveguide region. can do. Since the film formation temperature increases, As / P of the n-InGaAsP light guide layer 16 becomes P-rich. When InGaAsP becomes P-rich, the band gap increases. On the other hand, since the Ga / In ratio does not change, the film thickness of the n-InGaAsP light guide layer 16 does not change. [Selection diagram] FIG. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010003921-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010003923-A |
| priorityDate | 2003-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.