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filingDate 2003-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004228243-A
titleOfInvention Method for forming insulating film and semiconductor device using the same
abstract An object of the present invention is to form an insulating film having a low dielectric constant and an excellent film strength by using a silica sol-containing coating solution having a composition excellent in storage stability, thereby improving wiring delay of a semiconductor device. The method includes a step of exposing a substrate surface to water or an alcohol before applying the coating liquid to a substrate using a silica sol-containing coating liquid in which the concentrations of water and alcohols are all 1% by weight or less. [Selection diagram] Fig. 1
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