| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_884fe9334a399cd8bbb6b40e8076ea40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_245f977473ace89f1d28f6104b3917db |
| publicationDate |
2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004221448-A |
| titleOfInvention |
Nonvolatile semiconductor memory device and method of manufacturing the same |
| abstract |
A non-volatile semiconductor memory device capable of improving the charge retention characteristics of a silicon nitride film forming a charge storage layer and a method of manufacturing the same are provided. Data retention characteristics are improved by using a silicon nitride film having a Si—H bond density of 1 × 10 19 cm −3 or less as a charge storage layer 4 of a nonvolatile memory such as an MNOS memory or a MONOS memory. . In order to form this silicon nitride film, an LPCVD method using silicon tetrachloride (SiCl 4 ) and ammonia (NH 3 ) as source gases can be suitably used. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7786526-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7585787-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7692232-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8022460-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7999308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8212302-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7842992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8212304-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8227863-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8329536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8338257-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7723773-B2 |
| priorityDate |
2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |