| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7acd9416af412b5972feb55a5e652ea2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-30469 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J31-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-3042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-025 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-304 |
| filingDate |
2003-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09bc2f25e2c3d65f303dea3f7bc68ab9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb9a0624a7e0989772007f914647d669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4cabd98e4538294834348822e6261a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac45c6d8e568c3a4459a166cdeb736
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4ace3e6314d2fe62ff3ebc5cda4570b |
| publicationDate |
2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004221076-A |
| titleOfInvention |
Field emission type electron source and method of manufacturing the same |
| abstract |
Provided is a field emission type electron source having less in-plane variation in electron emission characteristics than in the past, and a method of manufacturing the same. A plurality of electron source elements are formed on one surface side of an insulating substrate made of a glass substrate. The electron source element 10a includes a lower electrode 12, a buffer layer 14 made of an amorphous silicon layer formed on the lower electrode 12a, a polycrystalline silicon layer 3 formed on the buffer layer 14, and a It comprises a strong electric field drift layer 6 formed and a surface electrode 7 formed on the strong electric field drift layer 6. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016009484-A1 |
| priorityDate |
2002-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |