http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004219364-A

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filingDate 2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_432a2c357faf5b825c1401555b2c54cd
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publicationDate 2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004219364-A
titleOfInvention Method for analyzing oxygen in Si sample
abstract Provided is a method for analyzing oxygen in a Si sample, which can measure the amount of oxygen in a Si sample with high accuracy, can reduce variation in measured values, and can maintain durability of a graphite container (graphite crucible). In a first quantification step S8, a first quantification lower than the melting point of a Si sample 38 in an inert gas is carried out in a graphite crucible 42 (Si sample 38) via a lower electrode member 18 and an upper electrode member 20. Heat to temperature. The CO generated in the first quantification step S8 corresponds to the contaminated oxygen on the surface of the Si sample 38. Therefore, the amount X1 of oxygen adhering to the surface of the Si sample 38 is converted and displayed based on the amount of CO. In the second quantitative step S14, the graphite crucible 42 (Si sample 38) is heated to a second quantitative temperature equal to or higher than the melting point of the Si sample 38 in the inert gas via the lower electrode member 18 and the upper electrode member 20. . The CO generated in the second determination step S14 corresponds to the total oxygen amount Z corresponding to the sum of the oxygen amount X2 on the surface of the Si sample 38 and the oxygen amount Y in the sample. Then, based on the amount of CO, the total oxygen amount Z of the Si sample 38 is converted and displayed. [Selection] Fig. 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013250061-A
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