| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R1-026 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-62 |
| filingDate |
2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7024e0d27a02e536468ad2b7631119e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad0b2dd5d29384038b011328393e5e6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbcd12840c339c7df013e139967139c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b84b4377166c49f6262b850365a1f994
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a232ec5959eb06932ab71ae8ab8dd7f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce52b71c32bba5c0f86fc33f16615aab |
| publicationDate |
2004-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004210605-A |
| titleOfInvention |
Acicular zinc oxide crystals |
| abstract |
An object of the present invention is to transfer and transfer electrons and holes smoothly, have a low internal resistance and recombination probability, and have a high conversion efficiency. To provide a photoelectric conversion device having good contact and a high mass transfer rate, and a needle-like zinc oxide crystal having a large aspect ratio used for an n-type charge transport layer of the photoelectric conversion device. Kind Code: A1 Abstract: A zinc oxide needle-like crystal 11 containing copper or a compound 13 containing copper at a tip portion, having a length to diameter ratio of 10 or more and a diameter of 5 nm or more and 500 nm or less. On a transparent conductive material layer 15 formed on a transparent substrate 14, a transparent oxide semiconductor layer 16 and an zinc oxide needle crystal 11 as an n-type charge transport layer, a light absorption layer 18, and a p-type charge transport A photoelectric conversion device in which layers 17 are sequentially stacked. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010050575-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2845882-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2306479-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2302650-A2 |
| priorityDate |
2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |